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Schottky barrier semiconductor device

См. также в других словарях:

  • Schottky barrier — A Schottky barrier is a potential barrier formed at a metal semiconductor junction which has rectifying characteristics, suitable for use as a diode. The largest differences between a Schottky barrier and a p n junction are its typically lower… …   Wikipedia

  • schottky barrier — noun Usage: usually capitalized S Etymology: Schottky defect : a potential barrier that exists at a metal semiconductor interface (as in a solid state electronic device) …   Useful english dictionary

  • Schottky diode — The Schottky diode (named after German physicist Walter H. Schottky; also known as hot carrier diode) is a semiconductor diode with a low forward voltage drop and a very fast switching action.In the early days of wireless, cat s whisker detectors …   Wikipedia

  • N-type semiconductor — N type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in silicon). This creates an excess of negative (n type) electron charge… …   Wikipedia

  • Heterostructure barrier varactor — diode The Heterostructure barrier varactor (HBV) diode was invented by Erik Kollberg together with Anders Rydberg in 1989 at Chalmers University of Technology. This semiconductor diode has an anti symmetric current voltage relationship and a… …   Wikipedia

  • Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) …   Wikipedia

  • Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… …   Wikipedia

  • Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… …   Wikipedia

  • Thermionic emission — Closeup of the filament on a low pressure mercury gas discharge lamp showing white thermionic emission mix coating on the central portion of the coil. Typically made of a mixture of barium, strontium and calcium oxides, the coating is sputtered… …   Wikipedia

  • History of the transistor — Invention of the transistor= The first patent [patent|US|1745175|Julius Edgar Lilienfeld: Method and apparatus for controlling electric current first filed in Canada on 22.10.1925, describing a device similar to a MESFET] for the field effect… …   Wikipedia

  • Spintronics — (a neologism meaning spin transport electronics [1][2]), also known as magnetoelectronics, is an emerging technology that exploits both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental… …   Wikipedia

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